IRF3205

Description

• IRF3205 Mosfet

Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.

To see full data of IRF3205, just click: http://www.irf.com/product-info/datasheets/data/irf3205.pdf