Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of applications.
click here to see the data of IRFP250N https://www.infineon.com/dgdl/irfp250n.pdf?fileId=5546d462533600a40153562884b41fdc
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